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Kingston KHX2133C11D3/4GX 4GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Kingston KHX2133C11D3/4GX 4GB vs Micron Technology 18ASF1G72PDZ-2G1A1 8GB

总分
star star star star star
Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分
star star star star star
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

差异 规格 评论

差异

Kingston KHX2133C11D3/4GX 4GB 需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 51
    左右 27% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.3
    测试中的平均数值
Micron Technology 18ASF1G72PDZ-2G1A1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 51
  • 读取速度，GB/s
    15.5 left arrow 10.9
  • 写入速度，GB/s
    10.1 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2595 left arrow 2286

Kingston KHX2133C11D3/4GX 4GB RAM的比较

Golden Empire CL11-12-12 D3-2400 4GB
Corsair CMSX32GX4M2A2666C18 16GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9965525-140.A00LF 8GB
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内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
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Corsair CMV8GX4M1A2666C18 8GB
Corsair CMV8GX4M1A2666C18 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston 99U5403-036.A00G 4GB
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内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
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内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Samsung M471B5273EB0-CK0 4GB
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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16GB 2133MHz DIMM 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
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AMD R538G1601U2S 8GB
Hewlett-Packard 7EH67AA# 8GB
Hewlett-Packard 7EH67AA# 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
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