Kingston KHX2133C11D3/4GX 4GB vs Mushkin 99[2/7/4]202F 4GB

总分

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

差异规格评论

差异

Kingston KHX2133C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB

报告一个错误

更快的读取速度，GB/s

15.5 15

测试中的平均数值

Mushkin 99[2/7/4]202F 4GB

需要考虑的原因
Mushkin 99[2/7/4]202F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 -48% 更低的延时
更快的写入速度，GB/s

11.1 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX2133C11D3/4GX 4GB

Mushkin 99[2/7/4]202F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 25
读取速度，GB/s

15.5 15.0
写入速度，GB/s

10.1 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2595 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Golden Empire CL16-20-20 D4-3200 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

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DSL Memory D4SH1G081SH26A-C 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CMWB8G1L3200K16W4 8GB

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Kingston 9905471-006.A01LF 4GB

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Corsair CMW32GX4M2C3200C16 16GB

Corsair CMW32GX4M2C3200C16 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BLS4G4D26BFSB.8FBD2 4GB