Kingston KHX2400C11D3/4GX 4GB vs G Skill Intl F4-3600C16-8GTZ 8GB

总分

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

总分

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

差异规格评论

差异

Kingston KHX2400C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2400C11D3/4GX 4GB

报告一个错误

G Skill Intl F4-3600C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 35

左右 -52% 更低的延时
更快的读取速度，GB/s

20.4 16.2

测试中的平均数值
更快的写入速度，GB/s

16.5 10.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX2400C11D3/4GX 4GB

G Skill Intl F4-3600C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 23
读取速度，GB/s

16.2 20.4
写入速度，GB/s

10.7 16.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2726 3810

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C16-8GTZ 8GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Crucial Technology BLS16G4S240FSD.16FBR 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Essencore Limited IM4AGU88A30-FGGHMB 16GB

Essencore Limited IM4AGU88A30-FGGHMB 16GB