Crucial Technology CT102464BF160B.C16 8GB vs Crucial Technology CT16G4DFD8213.16FDD1 16GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 76

左右 42% 更低的延时
更快的写入速度，GB/s

8.6 6.4

测试中的平均数值

Crucial Technology CT16G4DFD8213.16FDD1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.16FDD1 16GB

报告一个错误

更快的读取速度，GB/s

13.6 12.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 76
读取速度，GB/s

12.6 13.6
写入速度，GB/s

8.6 6.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2193 1624

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4133C17-8GTZR 8GB

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Hewlett-Packard 7EH98AA#ABB 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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UMAX Technology 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Samsung M471B1G73EB0-YK0 8GB

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Corsair CMR32GX4M2C3000C16 16GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Asgard VMA45UH-MEC1U2AW2 16GB

Asgard VMA45UH-MEC1U2AW2 16GB