Kingston KHX318C10FR/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 60

左右 -114% 更低的延时
更快的读取速度，GB/s

13.8 6.8

测试中的平均数值
更快的写入速度，GB/s

10.1 5.4

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 28
读取速度，GB/s

6.8 13.8
写入速度，GB/s

5.4 10.1
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston X75V1H-MIE 32GB

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Patriot Memory (PDP Systems) PSD48G320081 8GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMAA1GU6CJR6N-XN 8GB