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Kingston KHX3200C18D4/8G 8GB
Corsair CMK16GX4M2Z2400C16 8GB

Kingston KHX3200C18D4/8G 8GB vs Corsair CMK16GX4M2Z2400C16 8GB

总分
star star star star star
Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分
star star star star star
Corsair CMK16GX4M2Z2400C16 8GB

Corsair CMK16GX4M2Z2400C16 8GB

差异 规格 评论

差异

Kingston KHX3200C18D4/8G 8GB 需要考虑的原因
Kingston KHX3200C18D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 12.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Corsair CMK16GX4M2Z2400C16 8GB 需要考虑的原因
Corsair CMK16GX4M2Z2400C16 8GB
报告一个错误

规格

完整的技术规格清单
Kingston KHX3200C18D4/8G 8GB
Corsair CMK16GX4M2Z2400C16 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    18.2 left arrow 16.7
  • 写入速度，GB/s
    14.9 left arrow 12.1
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3501 left arrow 3090

Kingston KHX3200C18D4/8G 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Kingston 9965525-140.A00LF 8GB

Corsair CMK16GX4M2Z2400C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
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内存RAM
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内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
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内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
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Samsung M393B5270CH0-CH9 4GB
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内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
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Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CM4X8GF3000C15K4 8GB
Corsair CM4X8GF3000C15K4 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
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Crucial Technology BL16G32C16S4B.8FB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston KHX3466C19D4/16G 16GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
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Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
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Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-3200C14-32GTRS 32GB
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung V-GeN D4S16GL32A8TS 16GB
内存RAM