Kingston KHX3200C18D4/8G 8GB vs Golden Empire CL15-15-15 D4-2666 4GB

总分

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分

Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

差异规格评论

差异

Kingston KHX3200C18D4/8G 8GB

需要考虑的原因
Kingston KHX3200C18D4/8G 8GB

报告一个错误

更快的读取速度，GB/s

18.2 13.4

测试中的平均数值
更快的写入速度，GB/s

14.9 11.0

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Golden Empire CL15-15-15 D4-2666 4GB

需要考虑的原因
Golden Empire CL15-15-15 D4-2666 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时

规格

完整的技术规格清单

Kingston KHX3200C18D4/8G 8GB

Golden Empire CL15-15-15 D4-2666 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

18.2 13.4
写入速度，GB/s

14.9 11.0
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3501 2673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BL16G32C16U4RL.M16FE 16GB

Crucial Technology BL16G32C16U4RL.M16FE 16GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB