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Kingston KHX3200C18D4/8G 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB

Kingston KHX3200C18D4/8G 8GB vs Smart Modular SMS4TDC3C0K0446SCG 4GB

总分
star star star star star
Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分
star star star star star
Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

差异 规格 评论

差异

Kingston KHX3200C18D4/8G 8GB 需要考虑的原因
Kingston KHX3200C18D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 10.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Smart Modular SMS4TDC3C0K0446SCG 4GB 需要考虑的原因
Smart Modular SMS4TDC3C0K0446SCG 4GB
报告一个错误

规格

完整的技术规格清单
Kingston KHX3200C18D4/8G 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 39
  • 读取速度，GB/s
    18.2 left arrow 14.3
  • 写入速度，GB/s
    14.9 left arrow 10.8
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3501 left arrow 2159

Kingston KHX3200C18D4/8G 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Kingston 9965525-140.A00LF 8GB

Smart Modular SMS4TDC3C0K0446SCG 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HMT351S6CFR8C-PB 4GB
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Gloway International (HK) STK4U2400D17041C 4GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMN16GX4M2Z3200C16 8GB
Corsair CMN16GX4M2Z3200C16 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M4C3200C14C 8GB
Corsair CMD32GX4M4C3200C14C 8GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
G Skill Intl F4-2400C17-4GNT 4GB
G Skill Intl F4-2400C17-4GNT 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire CL18-20-20 D4-3000 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2400C17-8GDBVR 8GB
G Skill Intl F4-2400C17-8GDBVR 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M4A2800C16 4GB
Corsair CMK16GX4M4A2800C16 4GB
内存RAM
Kingston 9905403-500.A01LF 8GB
Kingston 9905403-500.A01LF 8GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
Kingston 99U5458-002.A00LF 2GB
Kingston 99U5458-002.A00LF 2GB
G Skill Intl F4-3466C16-16GTZSW 16GB
G Skill Intl F4-3466C16-16GTZSW 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
Corsair CMK32GX4M4A2400C12 8GB
Corsair CMK32GX4M4A2400C12 8GB
内存RAM