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Kingston KP223C-ELD 2GB
Panram International Corporation PUD43000C158G2NJK 8GB

Kingston KP223C-ELD 2GB vs Panram International Corporation PUD43000C158G2NJK 8GB

总分
star star star star star
Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

总分
star star star star star
Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

差异 规格 评论

差异

Kingston KP223C-ELD 2GB 需要考虑的原因
Kingston KP223C-ELD 2GB
报告一个错误
Panram International Corporation PUD43000C158G2NJK 8GB 需要考虑的原因
Panram International Corporation PUD43000C158G2NJK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 27
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    19.8 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston KP223C-ELD 2GB
Panram International Corporation PUD43000C158G2NJK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 19
  • 读取速度，GB/s
    13.4 left arrow 19.8
  • 写入速度，GB/s
    8.8 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2137 left arrow 3370

Kingston KP223C-ELD 2GB RAM的比较

Samsung M378B5673EH1-CH9 2GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Panram International Corporation PUD43000C158G2NJK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Kingston KP223C-ELD 2GB
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内存RAM
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Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
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内存RAM
Samsung M471B5673FH0-CF8 2GB
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Micron Technology CT4G4DFS8213.8FA11 4GB
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