Kingston KVR16N11/8-SP 8GB vs Corsair CM4B8G2J2133A15S 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Corsair CM4B8G2J2133A15S 8GB

Corsair CM4B8G2J2133A15S 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

Corsair CM4B8G2J2133A15S 8GB

需要考虑的原因
Corsair CM4B8G2J2133A15S 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

15.2 13.9

测试中的平均数值
更快的写入速度，GB/s

11.7 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Corsair CM4B8G2J2133A15S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

13.9 15.2
写入速度，GB/s

9.5 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 2655

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18HTF12872AY-800F1 1GB

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Terabyte Co Ltd RCX2-16G3000R 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Panram International Corporation PUD42400C154G2NJW 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M393B2G70QH0-CMA 16GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M471A1K1KBB0-CPB 8GB