Kingston 9905458-017.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Kingston 9905458-017.A01LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

总分
star star star star star
Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

差异

  • 低于PassMark测试中的延时,ns
    25 left arrow 28
    左右 11% 更低的延时
  • 更快的读取速度,GB/s
    13.8 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度,GB/s
    10.4 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽,mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905458-017.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    25 left arrow 28
  • 读取速度,GB/s
    12.8 left arrow 13.8
  • 写入速度,GB/s
    8.6 left arrow 10.4
  • 内存带宽,mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2239 left arrow 2354
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较