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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 35
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 23
  • 读取速度，GB/s
    13.7 left arrow 18.2
  • 写入速度，GB/s
    9.6 left arrow 15.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3498

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Kingston 9905700-011.A00G 8GB
Kingston 9905700-011.A00G 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston 9905702-082.A00G 8GB
Kingston 9905702-082.A00G 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Apacer Technology 78.DAGP2.4030B 16GB
Apacer Technology 78.DAGP2.4030B 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Essencore Limited KD48GS88J-26N1900 8GB
Essencore Limited KD48GS88J-26N1900 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Super Talent F24SB8GH 8GB
Super Talent F24SB8GH 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung M471A1K43CB1-CRCR 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK32GX4M4B3600C16 8GB
Corsair CMK32GX4M4B3600C16 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
内存RAM