Kingston KVR533D2N4 512MB vs Corsair CMK16GX4M2A2133C13 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMK16GX4M2A2133C13 8GB

Corsair CMK16GX4M2A2133C13 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMK16GX4M2A2133C13 8GB

需要考虑的原因
Corsair CMK16GX4M2A2133C13 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 75

左右 -127% 更低的延时
更快的读取速度，GB/s

16.2 1

测试中的平均数值
更快的写入速度，GB/s

11.6 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMK16GX4M2A2133C13 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 33
读取速度，GB/s

1,943.5 16.2
写入速度，GB/s

1,672.1 11.6
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2907

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

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Crucial Technology BLS4G4D26BFSB.8FB 4GB

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Crucial Technology BLS16G4D26BFSB.16FD 16GB

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Avant Technology W641GU67J5213N8 8GB

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Kingston 99U5474-022.A00LF 2GB

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Corsair CM4X8GF2400C16S4 8GB

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Kingston 9905702-010.A00G 8GB

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Kingston 9905713-004.A00G 4GB

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Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFS8266.C8FE 8GB

Crucial Technology CT8G4DFS8266.C8FE 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMK64GX4M4B3600C18 16GB

Corsair CMK64GX4M4B3600C18 16GB