Kingston KVR533D2N4 512MB vs Crucial Technology CT8G4DFD8213.M16FB 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Crucial Technology CT8G4DFD8213.M16FB 8GB

Crucial Technology CT8G4DFD8213.M16FB 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Crucial Technology CT8G4DFD8213.M16FB 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.M16FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 75

左右 -150% 更低的延时
更快的读取速度，GB/s

16.7 1

测试中的平均数值
更快的写入速度，GB/s

12.0 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Crucial Technology CT8G4DFD8213.M16FB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 30
读取速度，GB/s

1,943.5 16.7
写入速度，GB/s

1,672.1 12.0
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2982

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR32GX4M4C3000C16 8GB

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PUSKILL DDR3 1600 8G 8GB

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SK Hynix HMT451U6BFR8A-PB 4GB

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G Skill Intl F4-2133C15-4GRK 4GB

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Samsung M393A4K40BB0-CPB 32GB

Samsung M393A4K40BB0-CPB 32GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Corsair CMK32GX4M4K3600C16 8GB