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Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Kingston KVR533D2N4 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 75
    左右 -213% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 4200
    左右 4.57 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 24
  • 读取速度，GB/s
    1,943.5 left arrow 16.0
  • 写入速度，GB/s
    1,672.1 left arrow 10.8
  • 内存带宽，mbps
    4200 left arrow 19200
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    301 left arrow 2731

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMG16GX4M2D3600C18 8GB
Corsair CMG16GX4M2D3600C18 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
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Samsung M471A1K43BB1-CTD 8GB
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Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
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Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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Kingston 9905633-017.A00G 8GB
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Kingston KVR800D2N6/2G 2GB
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Patriot Memory (PDP Systems) PSD48G266682 8GB
内存RAM
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Samsung M4 70T2953EZ3-CE6 1GB
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A-DATA Technology ADOVF1A083FE 1GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Kingston KHX2666C16/16G 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM