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Kingston KVR533D2N4 512MB
Panram International Corporation PUD42400C154G2NJK 4GB
比较
Kingston KVR533D2N4 512MB vs Panram International Corporation PUD42400C154G2NJK 4GB
总分
Kingston KVR533D2N4 512MB
总分
Panram International Corporation PUD42400C154G2NJK 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
需要考虑的原因
Panram International Corporation PUD42400C154G2NJK 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
75
左右 -188% 更低的延时
更快的读取速度,GB/s
13.5
1
测试中的平均数值
更快的写入速度,GB/s
8.3
1,672.1
测试中的平均数值
更高的内存带宽,mbps
17000
4200
左右 4.05 更高的带宽
规格
完整的技术规格清单
Kingston KVR533D2N4 512MB
Panram International Corporation PUD42400C154G2NJK 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
26
读取速度,GB/s
1,943.5
13.5
写入速度,GB/s
1,672.1
8.3
内存带宽,mbps
4200
17000
Other
描述
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
4-4-4-12 / 533 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
301
2157
Kingston KVR533D2N4 512MB RAM的比较
Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Panram International Corporation PUD42400C154G2NJK 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3000C14-16GTZR 16GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905703-009.A00G 16GB
Kingston KVR533D2N4 512MB
Panram International Corporation PUD42400C154G2NJK 4GB
Crucial Technology CT102464BF160B-16F 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avant Technology J641GU42J7240N3 8GB
Samsung M3 78T2863EHS-CF7 1GB
Panram International Corporation W4N2666PS-8G 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMD8GX4M2B3466C18 4GB
Kingston 9905403-090.A01LF 4GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
报告一个错误
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Bug description
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