Kingston KVR533D2N4 512MB vs Samsung M378A1K43BB1-CTD 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Samsung M378A1K43BB1-CTD 16GB

需要考虑的原因
Samsung M378A1K43BB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 75

左右 -142% 更低的延时
更快的读取速度，GB/s

17.3 1

测试中的平均数值
更快的写入速度，GB/s

13.4 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Samsung M378A1K43BB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 31
读取速度，GB/s

1,943.5 17.3
写入速度，GB/s

1,672.1 13.4
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 2762

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT151R7TFR4C-H9 4GB

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Corsair CML16GX3M2A1600C10 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston 99U5403-468.A00LF 8GB

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Corsair CMR64GX4M4C3000C15 16GB

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AMD R5316G1609U2K 8GB

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Corsair CMK16GX4M4B3400C16 4GB

Samsung M4 70T2864QZ3-CF7 1GB

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Kingston ACR26D4U9S8ME-8 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston KKN2NM-MIE 4GB

Kingston KKN2NM-MIE 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMD64GX4M8A2800C16 8GB

Corsair CMD64GX4M8A2800C16 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB