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Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Kingston KVR800D2N6/2G 2GB vs Crucial Technology BLS16G4D26BFSC.16FBD 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15
    测试中的平均数值
Crucial Technology BLS16G4D26BFSC.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 50
    左右 -39% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 36
  • 读取速度，GB/s
    5,143.3 left arrow 15.0
  • 写入速度，GB/s
    1,905.1 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3098

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston KVR800D2N6/2G 2GB
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Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Kingston KHX2800C14D4/8GX 8GB
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Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Crucial Technology CT8G4DFS6266.M4FB 8GB
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G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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Corsair CMK128GX4M4D3600C18 32GB
内存RAM
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Samsung M393B5170FH0-CH9 4GB
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Apacer Technology GD2.1527WC.001 8GB
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