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Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2400C15-8GVB 8GB

Kingston KVR800D2N6/2G 2GB vs G Skill Intl F4-2400C15-8GVB 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.9
    测试中的平均数值
G Skill Intl F4-2400C15-8GVB 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GVB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 50
    左右 -52% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2400C15-8GVB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 33
  • 读取速度，GB/s
    5,143.3 left arrow 15.9
  • 写入速度，GB/s
    1,905.1 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2994

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-2400C15-8GVB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Kingston KHX2666C16D4/16GX 16GB
Kingston KHX2666C16D4/16GX 16GB
Kingston 9905700-046.A00G 16GB
Kingston 9905700-046.A00G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C14-16GTZKO 16GB
G Skill Intl F4-3200C14-16GTZKO 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2400C15-8GVB 8GB
G Skill Intl F4-2400C15-8GVB 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2666C18-8GTZR 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMD32GX4M4B3466C16 8GB
Corsair CMD32GX4M4B3466C16 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2400C15-16GTZRX 16GB
G Skill Intl F4-2400C15-16GTZRX 16GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Crucial Technology M471B1G73DB0-YK0 8GB
Crucial Technology M471B1G73DB0-YK0 8GB
内存RAM
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM