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Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-16GTZKW 16GB

Kingston KVR800D2N6/2G 2GB vs G Skill Intl F4-3200C14-16GTZKW 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZKW 16GB

G Skill Intl F4-3200C14-16GTZKW 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 19.7
    测试中的平均数值
G Skill Intl F4-3200C14-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 50
    左右 -92% 更低的延时
  • 更快的写入速度，GB/s
    15.5 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 26
  • 读取速度，GB/s
    5,143.3 left arrow 19.7
  • 写入速度，GB/s
    1,905.1 left arrow 15.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3832

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3200C14-16GTZKW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5471-012.A00 4GB
Kingston 99U5471-012.A00 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-4000C19-16GTRS 16GB
G Skill Intl F4-4000C19-16GTRS 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK128GX4M4A2400C16 32GB
Corsair CMK128GX4M4A2400C16 32GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-16GTZKW 16GB
G Skill Intl F4-3200C14-16GTZKW 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingmax Semiconductor FLFF65F-C8KL9 4GB
Kingmax Semiconductor FLFF65F-C8KL9 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM