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Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB

Kingston KVR800D2N6/2G 2GB vs G Skill Intl F4-3600C16-8GTZRC 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.1
    测试中的平均数值
G Skill Intl F4-3600C16-8GTZRC 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GTZRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 50
    左右 -85% 更低的延时
  • 更快的写入速度，GB/s
    16.0 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 27
  • 读取速度，GB/s
    5,143.3 left arrow 18.1
  • 写入速度，GB/s
    1,905.1 left arrow 16.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3672

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3600C16-8GTZRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-4266C19-8GTRG 8GB
G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMSX16GX4M2A2666C18 8GB
Corsair CMSX16GX4M2A2666C18 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Kingston 9905599-020.A00G 8GB
Kingston 9905599-020.A00G 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Neo Forza NMUD480E86-3200 8GB
Neo Forza NMUD480E86-3200 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
内存RAM
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
AMD R748G2133U2S 8GB
AMD R748G2133U2S 8GB
内存RAM