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Samsung M3 78T5663RZ3-CF7 2GB
Golden Empire CL16-20-20 D4-3200 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs Golden Empire CL16-20-20 D4-3200 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Golden Empire CL16-20-20 D4-3200 16GB

Golden Empire CL16-20-20 D4-3200 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 11.0
    测试中的平均数值
Golden Empire CL16-20-20 D4-3200 16GB 需要考虑的原因
Golden Empire CL16-20-20 D4-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 65
    左右 -97% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Golden Empire CL16-20-20 D4-3200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 33
  • 读取速度，GB/s
    4,806.8 left arrow 16.9
  • 写入速度，GB/s
    2,784.6 left arrow 11.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    932 left arrow 3041

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Golden Empire CL16-20-20 D4-3200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
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内存RAM
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内存RAM
Corsair CMX8GX3M2A1600C11 4GB
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内存RAM
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
内存RAM
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Corsair CMX4GX3M1A1333C9 4GB
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内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3200C15-4GRKD 4GB
G Skill Intl F4-3200C15-4GRKD 4GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Corsair CMD32GX4M2B3000C15 16GB
内存RAM
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Kingmax Semiconductor FLFE85F-C8KM9 2GB
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Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
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Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM