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Kingston KVR800D2N6/2G 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Kingston KVR800D2N6/2G 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 13.5
    测试中的平均数值
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB 需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 50
    左右 -61% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 31
  • 读取速度，GB/s
    5,143.3 left arrow 13.5
  • 写入速度，GB/s
    1,905.1 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2330

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
内存RAM
Samsung M471A1K43BB1-CTD 8GB
Samsung M471A1K43BB1-CTD 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX2666C16D4/16GX 16GB
Kingston KHX2666C16D4/16GX 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M4B3400C16 4GB
Corsair CMK16GX4M4B3400C16 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston KHX2133C15S4/8G 8GB
Kingston KHX2133C15S4/8G 8GB
内存RAM