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Kingston KVR800D2N6/2G 2GB
Teikon TMA851U6CJR6N-VKSC 4GB

Kingston KVR800D2N6/2G 2GB vs Teikon TMA851U6CJR6N-VKSC 4GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 62
    左右 19% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 16.1
    测试中的平均数值
Teikon TMA851U6CJR6N-VKSC 4GB 需要考虑的原因
Teikon TMA851U6CJR6N-VKSC 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.0 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 62
  • 读取速度，GB/s
    5,143.3 left arrow 16.1
  • 写入速度，GB/s
    1,905.1 left arrow 6.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    855 left arrow 1586

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Teikon TMA851U6CJR6N-VKSC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905701-022.A00G 16GB
Kingston 9905701-022.A00G 16GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
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内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMW32GX4M2Z3200C16 16GB
Corsair CMW32GX4M2Z3200C16 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM