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Kingston KVT8FP-HYC 4GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB

Kingston KVT8FP-HYC 4GB vs Micron Technology 18ADF2G72AZ-2G6E1 16GB

总分
star star star star star
Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

总分
star star star star star
Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

差异 规格 评论

差异

Kingston KVT8FP-HYC 4GB 需要考虑的原因
Kingston KVT8FP-HYC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 64
    左右 38% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 8.5
    测试中的平均数值
Micron Technology 18ADF2G72AZ-2G6E1 16GB 需要考虑的原因
Micron Technology 18ADF2G72AZ-2G6E1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 14.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston KVT8FP-HYC 4GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 64
  • 读取速度，GB/s
    14.4 left arrow 18.0
  • 写入速度，GB/s
    9.6 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 2197

Kingston KVT8FP-HYC 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor FLGF65F-C8KL9A 4GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston KVT8FP-HYC 4GB
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内存RAM
Samsung M471B5273DH0-CK0 4GB
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内存RAM
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内存RAM
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内存RAM
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Super Talent F24UB16GV 16GB
内存RAM
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Kingston 9905403-156.A00LF 2GB
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Corsair CMK64GX4M4K3733C17 16GB
内存RAM