Kingston LV32D4S2S8HD-8 8GB vs Crucial Technology CT16G4SFRA32A.C16FJ 16GB

总分

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

总分

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

差异规格评论

差异

Kingston LV32D4S2S8HD-8 8GB

需要考虑的原因
Kingston LV32D4S2S8HD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 31% 更低的延时
更快的读取速度，GB/s

16.2 15.2

测试中的平均数值
更快的写入速度，GB/s

12.0 9.5

测试中的平均数值

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FJ 16GB

报告一个错误

规格

完整的技术规格清单

Kingston LV32D4S2S8HD-8 8GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 42
读取速度，GB/s

16.2 15.2
写入速度，GB/s

12.0 9.5
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2950 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C18-8GTZ 8GB

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Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology BLT4G4D26AFTA.8FBD 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

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Kingston 9965516-112.A00LF 16GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

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SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB