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Kingston RB16D3LS1KBG/4G 4GB
Micron Technology AFLD44EK2P 4GB

Kingston RB16D3LS1KBG/4G 4GB vs Micron Technology AFLD44EK2P 4GB

总分
star star star star star
Kingston RB16D3LS1KBG/4G 4GB

Kingston RB16D3LS1KBG/4G 4GB

总分
star star star star star
Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

差异 规格 评论

差异

Kingston RB16D3LS1KBG/4G 4GB 需要考虑的原因
Kingston RB16D3LS1KBG/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 71
    左右 59% 更低的延时
  • 更快的写入速度，GB/s
    7.9 left arrow 6.8
    测试中的平均数值
Micron Technology AFLD44EK2P 4GB 需要考虑的原因
Micron Technology AFLD44EK2P 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 12
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston RB16D3LS1KBG/4G 4GB
Micron Technology AFLD44EK2P 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 71
  • 读取速度，GB/s
    12.0 left arrow 15.3
  • 写入速度，GB/s
    7.9 left arrow 6.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2064 left arrow 1767

Kingston RB16D3LS1KBG/4G 4GB RAM的比较

Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2666C18-4GFX 4GB

Micron Technology AFLD44EK2P 4GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston RB16D3LS1KBG/4G 4GB
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Micron Technology AFLD44EK2P 4GB
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内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Kingston ACR26D4S9S1KA-4 4GB
内存RAM
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内存RAM
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内存RAM