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takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Micron Technology 18ASF1G72PDZ-2G1A1 8GB

总分
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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 51
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 10.9
    测试中的平均数值
Micron Technology 18ASF1G72PDZ-2G1A1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.3 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 51
  • 读取速度，GB/s
    3,757.3 left arrow 10.9
  • 写入速度，GB/s
    1,457.4 left arrow 8.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    557 left arrow 2286

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Apacer Technology 78.C1GM3.C7W0B 8GB
Apacer Technology 78.C1GM3.C7W0B 8GB
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Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Corsair CMK64GX4M2A2400C16 32GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Kllisre 99P5428-002.A00LF 8GB
内存RAM
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Mushkin MR[ABC]4U320GJJM8G 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2133C13S4/4G 4GB
Kingston KHX2133C13S4/4G 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston CBD26D4S9S8ME-8 8GB
Kingston CBD26D4S9S8ME-8 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMR32GX4M2C3000C16 16GB
Corsair CMR32GX4M2C3000C16 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
内存RAM