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Kingston SNY1333D3S9DR8/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB

Kingston SNY1333D3S9DR8/2G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB

总分
star star star star star
Kingston SNY1333D3S9DR8/2G 2GB

Kingston SNY1333D3S9DR8/2G 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB

差异 规格 评论

差异

Kingston SNY1333D3S9DR8/2G 2GB 需要考虑的原因
Kingston SNY1333D3S9DR8/2G 2GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 121
    左右 -348% 更低的延时
  • 更快的读取速度，GB/s
    10.7 left arrow 2.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.4 left arrow 2.2
    测试中的平均数值

规格

完整的技术规格清单
Kingston SNY1333D3S9DR8/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    121 left arrow 27
  • 读取速度，GB/s
    2.5 left arrow 10.7
  • 写入速度，GB/s
    2.2 left arrow 7.4
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    425 left arrow 1444

Kingston SNY1333D3S9DR8/2G 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5273DH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB RAM的比较

Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Kingston SNY1333D3S9DR8/2G 2GB
Kingston SNY1333D3S9DR8/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 99U5700-028.A00G 8GB
Kingston 99U5700-028.A00G 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
内存RAM
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-4000C19-4GVK 4GB
G Skill Intl F4-4000C19-4GVK 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905700-046.A00G 16GB
Kingston 9905700-046.A00G 16GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Mushkin MRX4U300GJJM16G 16GB
Mushkin MRX4U300GJJM16G 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M471B5773CHS-CH9 2GB
Samsung M471B5773CHS-CH9 2GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
内存RAM