RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB

Kingston SNY1600S11-4G-EDEG 4GB vs G Skill Intl F4-3466C16-8GTZSW 8GB

总分
star star star star star
Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZSW 8GB

G Skill Intl F4-3466C16-8GTZSW 8GB

差异 规格 评论

差异

Kingston SNY1600S11-4G-EDEG 4GB 需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 46
    左右 37% 更低的延时
G Skill Intl F4-3466C16-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZSW 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.6 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 5.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 46
  • 读取速度，GB/s
    9.4 left arrow 11.6
  • 写入速度，GB/s
    5.1 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1432 left arrow 2469

Kingston SNY1600S11-4G-EDEG 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

G Skill Intl F4-3466C16-8GTZSW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3600C19-16GSXW 16GB
G Skill Intl F4-3600C19-16GSXW 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905702-184.A00G 8GB
Kingston 9905702-184.A00G 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMU32GX4M4C3466C16 8GB
Corsair CMU32GX4M4C3466C16 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KYXC0V-MIH 16GB
Kingston KYXC0V-MIH 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Corsair CMR32GX4M2D3000C16 16GB
Corsair CMR32GX4M2D3000C16 16GB
内存RAM
ASint Technology SLB304G08-GGNHM 8GB
ASint Technology SLB304G08-GGNHM 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM