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Kingston SNY1600S11-4G-EDEG 4GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB

Kingston SNY1600S11-4G-EDEG 4GB vs Micron Technology 18ASF2G72AZ-2G1B1 16GB

总分
star star star star star
Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分
star star star star star
Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

差异 规格 评论

差异

Kingston SNY1600S11-4G-EDEG 4GB 需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB
报告一个错误
Micron Technology 18ASF2G72AZ-2G1B1 16GB 需要考虑的原因
Micron Technology 18ASF2G72AZ-2G1B1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.2 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 5.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston SNY1600S11-4G-EDEG 4GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 29
  • 读取速度，GB/s
    9.4 left arrow 14.2
  • 写入速度，GB/s
    5.1 left arrow 8.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1432 left arrow 2909

Kingston SNY1600S11-4G-EDEG 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Micron Technology 18ASF2G72AZ-2G1B1 16GB
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内存RAM
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内存RAM
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内存RAM
Samsung M471B5273CH0-CH9 4GB
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内存RAM
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G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM