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Kllisre KRE-D3U1600M/8G 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB

Kllisre KRE-D3U1600M/8G 8GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB

总分
star star star star star
Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

差异 规格 评论

差异

Kllisre KRE-D3U1600M/8G 8GB 需要考虑的原因
Kllisre KRE-D3U1600M/8G 8GB
报告一个错误
Micron Technology 16ATF2G64AZ-2G3B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 40
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kllisre KRE-D3U1600M/8G 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 35
  • 读取速度，GB/s
    14.4 left arrow 15.0
  • 写入速度，GB/s
    9.0 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2455 left arrow 2672

Kllisre KRE-D3U1600M/8G 8GB RAM的比较

Samsung M378B5173EB0-YK0 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905712-034.A00G 16GB
Kingston 9905712-034.A00G 16GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW16GX4M2D3000C16 8GB
Corsair CMW16GX4M2D3000C16 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston KHX3466C16D4/8GX 8GB
Kingston KHX3466C16D4/8GX 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Transcend Information TS2GLH64V1B 16GB
Transcend Information TS2GLH64V1B 16GB
内存RAM
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Avant Technology J642GU44J2320ND 16GB
Avant Technology J642GU44J2320ND 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK64GX4M4K3733C17 16GB
Corsair CMK64GX4M4K3733C17 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Apacer Technology 78.CAGPN.DF40B 8GB
Apacer Technology 78.CAGPN.DF40B 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3200C15-8GVR 8GB
G Skill Intl F4-3200C15-8GVR 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Apacer Technology 78.CAGN7.4000C 8GB
Apacer Technology 78.CAGN7.4000C 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C14-8GTZR 8GB
G Skill Intl F4-3200C14-8GTZR 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
内存RAM