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Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMN16GX4M2Z3200C16 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Corsair CMN16GX4M2Z3200C16 8GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Corsair CMN16GX4M2Z3200C16 8GB

Corsair CMN16GX4M2Z3200C16 8GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.6
    测试中的平均数值
Corsair CMN16GX4M2Z3200C16 8GB 需要考虑的原因
Corsair CMN16GX4M2Z3200C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 59
    左右 -90% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMN16GX4M2Z3200C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 31
  • 读取速度，GB/s
    4,168.0 left arrow 20.6
  • 写入速度，GB/s
    1,855.7 left arrow 14.7
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    680 left arrow 3367

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Corsair CMN16GX4M2Z3200C16 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
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Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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Crucial Technology CT16G4SFD8266.C16FN 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Gold Key Technology Co Ltd NMUD480E86-3200 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
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Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
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Corsair CMD64GX4M8X4000C19 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
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Samsung M378A4G43AB2-CVF 32GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
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Peak Electronics 256X64M-67E 2GB
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Kingston 9905713-028.A00G 8GB
内存RAM
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Kingston 99U5429-007.A00LF 2GB
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Micron Technology 36ASF4G72PZ-2G6D1 32GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
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Corsair CMW16GX4M2K3600C16 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM