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Kreton Corporation 51624xxxx68x35xxxx 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
比较
Kreton Corporation 51624xxxx68x35xxxx 2GB vs GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
总分
Kreton Corporation 51624xxxx68x35xxxx 2GB
总分
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
差异
规格
评论
差异
需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
更快的读取速度,GB/s
4
17.4
测试中的平均数值
需要考虑的原因
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
59
左右 -64% 更低的延时
更快的写入速度,GB/s
12.8
1,855.7
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
36
读取速度,GB/s
4,168.0
17.4
写入速度,GB/s
1,855.7
12.8
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
680
3074
Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73QH0-YK0 8GB
Avant Technology J644GU44J9266NF 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston MSI26D4S9D8ME-16 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
AMD R744G2606U1S 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Kingston 99U5458-002.A00LF 2GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Kingston 99U5584-010.A00LF 4GB
SK Hynix HMA82GU6DJR8N-VK 16GB
Samsung M378B5173BH0-CH9 4GB
V-GEN D4H4GS24A8 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C14-16GVR 16GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9965600-012.A02G 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SF464128CK8I6GKSEG 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-8GVRB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
SK Hynix V-GeN D4H4GL26A8TL 4GB
报告一个错误
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Bug description
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