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Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
比较
Kreton Corporation 51624xxxx68x35xxxx 2GB vs Micron Technology 4ATF1G64HZ-3G2E2 8GB
总分
Kreton Corporation 51624xxxx68x35xxxx 2GB
总分
Micron Technology 4ATF1G64HZ-3G2E2 8GB
差异
规格
评论
差异
需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
更快的读取速度,GB/s
4
15.8
测试中的平均数值
需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E2 8GB
报告一个错误
低于PassMark测试中的延时,ns
49
59
左右 -20% 更低的延时
更快的写入速度,GB/s
11.0
1,855.7
测试中的平均数值
更高的内存带宽,mbps
25600
5300
左右 4.83 更高的带宽
规格
完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
49
读取速度,GB/s
4,168.0
15.8
写入速度,GB/s
1,855.7
11.0
内存带宽,mbps
5300
25600
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
680
2534
Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM的比较
Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Avant Technology F6451U64F9333G 4GB
Samsung M393A2G40EB1-CPB 16GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-8GFXR 8GB
A-DATA Technology DDR3 1600 4GB
Corsair CMD32GX4M4B3866C18 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston XRMWRN-MIE2 16GB
Samsung M393B1G70QH0-YK0 8GB
Samsung M393A1G43DB1-CRC 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
A-DATA Technology AD73I1C1674EV 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMU32GX4M2A2400C14 16GB
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378A1K43DB2-CVF 8GB
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
报告一个错误
×
Bug description
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