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Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.6
    测试中的平均数值
Micron Technology 4ATF51264AZ-2G3B1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 59
    左右 -74% 更低的延时
  • 更快的写入速度，GB/s
    11.2 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 34
  • 读取速度，GB/s
    4,168.0 left arrow 15.6
  • 写入速度，GB/s
    1,855.7 left arrow 11.2
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2468

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Essencore Limited KD44GU480-26N160T 4GB
Essencore Limited KD44GU480-26N160T 4GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston MSI24D4U7S8MH-8 8GB
Kingston MSI24D4U7S8MH-8 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Crucial Technology BL8G26C16U4R.8FD 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Hewlett-Packard 7EH99AA# 16GB
Hewlett-Packard 7EH99AA# 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMD16GX4M2A2400C14 8GB
Corsair CMD16GX4M2A2400C14 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Kingston 9905702-136.A00G 8GB
Kingston 9905702-136.A00G 8GB
内存RAM