Kreton Corporation 51624xxxx68x35xxxx 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

总分

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

差异规格评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB

需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB

报告一个错误

更快的读取速度，GB/s

4 18.7

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 59

左右 -211% 更低的延时
更快的写入速度，GB/s

14.2 1,855.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Kreton Corporation 51624xxxx68x35xxxx 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 19
读取速度，GB/s

4,168.0 18.7
写入速度，GB/s

1,855.7 14.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

680 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KF3600C18D4/16GX 16GB

Kingston KF3600C18D4/16GX 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB