Samsung DDR3 8GB 1600MHz 8GB vs G Skill Intl F4-3000C16-16GRS 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

G Skill Intl F4-3000C16-16GRS 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

17.7 14.9

测试中的平均数值
更快的写入速度，GB/s

14.7 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3000C16-16GRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

14.9 17.7
写入速度，GB/s

9.6 14.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMY16GX3M2A1866C9 8GB

Corsair CMY16GX3M2A1866C9 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Kingston HP26D4U9S1ME-4 4GB

Kingston HP26D4U9S1ME-4 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMW32GX4M4C3466C16 8GB

Corsair CMW32GX4M4C3466C16 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB