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Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology AE4S240038G17-BHYA 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs A-DATA Technology AE4S240038G17-BHYA 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 38
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 10.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
A-DATA Technology AE4S240038G17-BHYA 8GB 需要考虑的原因
A-DATA Technology AE4S240038G17-BHYA 8GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology AE4S240038G17-BHYA 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 38
  • 读取速度，GB/s
    17.8 left arrow 14.2
  • 写入速度，GB/s
    12.5 left arrow 10.7
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2429

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

A-DATA Technology AE4S240038G17-BHYA 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology AE4S240038G17-BHYA 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Apacer Technology 78.D2GFH.4030B 16GB
Apacer Technology 78.D2GFH.4030B 16GB
内存RAM
Crucial Technology BLS8G4D240FSA.16FARG 8GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CM4X16GD3200C16K2E 16GB
Corsair CM4X16GD3200C16K2E 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4400C16-8GTRS 8GB
G Skill Intl F4-4400C16-8GTRS 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX3200C20S4/32GX 32GB
Kingston KHX3200C20S4/32GX 32GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston HP26D4S9S1ME-4 4GB
Kingston HP26D4S9S1ME-4 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM