Samsung M378A5244CB0-CTD 4GB vs SK Hynix HMA41GR7AFR4N-TF 8GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 52

左右 31% 更低的延时
更快的读取速度，GB/s

15.8 10.3

测试中的平均数值
更快的写入速度，GB/s

11.8 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

SK Hynix HMA41GR7AFR4N-TF 8GB

需要考虑的原因
SK Hynix HMA41GR7AFR4N-TF 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

SK Hynix HMA41GR7AFR4N-TF 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 52
读取速度，GB/s

15.8 10.3
写入速度，GB/s

11.8 8.5
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2497 2390

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX4M8B3200C16 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Corsair CMK128GX4M8X3800C19 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M2B2800C14 8GB

Corsair CMK16GX4M2B2800C14 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMK64GX4M4A2400C16 16GB

Corsair CMK64GX4M4A2400C16 16GB