Lexar Co Limited LD4AU016G-H3200GST 16GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 6% 更低的延时
更快的读取速度，GB/s

17.8 13.6

测试中的平均数值
更快的写入速度，GB/s

12.5 11.6

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

报告一个错误

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 35
读取速度，GB/s

17.8 13.6
写入速度，GB/s

12.5 11.6
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3285 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.01GA0.9K5 1GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMA84GL7AFR4N-UH 32GB

SpecTek Incorporated ?????????????????? 2GB

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Crucial Technology CT8G4SFRA266.C4FE 8GB

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Kingston 99U5471-030.A00LF 8GB

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