Lexar Co Limited LD4AU016G-H3200GST 16GB vs Corsair CMD16GX4M4B2400C10 4GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Corsair CMD16GX4M4B2400C10 4GB

Corsair CMD16GX4M4B2400C10 4GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 13.7

测试中的平均数值
更快的写入速度，GB/s

12.5 10.2

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMD16GX4M4B2400C10 4GB

需要考虑的原因
Corsair CMD16GX4M4B2400C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 -32% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMD16GX4M4B2400C10 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 25
读取速度，GB/s

17.8 13.7
写入速度，GB/s

12.5 10.2
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3285 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M393B1G70BH0-CK0 8GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Mushkin MRA4S266GHHF32G 32GB

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Kingston 9905584-016.A00LF 4GB

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Kingston 99U5702-095.A00G 8GB

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Corsair CMWX16GC3000C15W4 16GB

Corsair CMWX16GC3000C15W4 16GB