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Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology BLS4G4D240FSB.8FAR 4GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 16.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Crucial Technology BLS4G4D240FSB.8FAR 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FAR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 33
    左右 -43% 更低的延时
  • 更快的写入速度，GB/s
    12.8 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 23
  • 读取速度，GB/s
    17.8 left arrow 16.3
  • 写入速度，GB/s
    12.5 left arrow 12.8
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2809

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS4G4D240FSB.8FAR 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965643-006.A01G 8GB
Kingston 9965643-006.A01G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2800C18-8GRS 8GB
G Skill Intl F4-2800C18-8GRS 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung V-GeN D4S16GL32A8TS 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Samsung M393A2K40CB1-CRC 16GB
Samsung M393A2K40CB1-CRC 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2400C14-4GRK 4GB
G Skill Intl F4-2400C14-4GRK 4GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 9965745-002.A00G 16GB
Kingston 9965745-002.A00G 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMSX32GX4M2A3000C18 16GB
Corsair CMSX32GX4M2A3000C18 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 99U5713-002.A00G 4GB
Kingston 99U5713-002.A00G 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Essencore Limited KD48GU881-26N190D 8GB
Essencore Limited KD48GU881-26N190D 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM