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Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology CT4G4DFS824A.C8FDD2 4GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更快的读取速度,GB/s
17.8
15.8
测试中的平均数值
更快的写入速度,GB/s
12.5
10.1
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
33
左右 -43% 更低的延时
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
23
读取速度,GB/s
17.8
15.8
写入速度,GB/s
12.5
10.1
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3285
2373
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Mushkin 991586 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
AMD AE34G2139U2 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Samsung M471A4G43BB1-CWE 32GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
G Skill Intl F3-14900CL10-8GBXL 8GB
V-GEN D4H8GL26A8TS6 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston HP24D4U7S8MBP-8 8GB
Crucial Technology CB8GS2666.C8ET 8GB
SK Hynix HMA851S6AFR6N-UH 4GB
Samsung M471B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMK256GX4M8A2400C16 32GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Corsair CML8GX3M2A1600C9 4GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
Elpida EBE10UE8AFSA-8G-F 1GB
G Skill Intl F4-3000C14-8GVR 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
报告一个错误
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Bug description
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