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Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston KHX3000C15D4/4GX 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Kingston KHX3000C15D4/4GX 4GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 16.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Kingston KHX3000C15D4/4GX 4GB 需要考虑的原因
Kingston KHX3000C15D4/4GX 4GB
报告一个错误
  • 更快的写入速度，GB/s
    12.7 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston KHX3000C15D4/4GX 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 33
  • 读取速度，GB/s
    17.8 left arrow 16.5
  • 写入速度，GB/s
    12.5 left arrow 12.7
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 3077

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Kingston KHX3000C15D4/4GX 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston KHX3000C15D4/4GX 4GB
Kingston KHX3000C15D4/4GX 4GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM
Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
内存RAM