Micron Technology 16JSF25664HZ-1G1F1 2GB vs Crucial Technology CT8G4SFRA266.C8FD1 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Crucial Technology CT8G4SFRA266.C8FD1 8GB

Crucial Technology CT8G4SFRA266.C8FD1 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 19% 更低的延时

Crucial Technology CT8G4SFRA266.C8FD1 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA266.C8FD1 8GB

报告一个错误

更快的读取速度，GB/s

15 10.5

测试中的平均数值
更快的写入速度，GB/s

10.8 7.1

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT8G4SFRA266.C8FD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 36
读取速度，GB/s

10.5 15.0
写入速度，GB/s

7.1 10.8
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1425 2700

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMT16GX4M2C3600C18 8GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3200C16-4GRKD 4GB

G Skill Intl F4-3200C16-4GRKD 4GB