Micron Technology 16JSF25664HZ-1G1F1 2GB vs G Skill Intl F4-3200C16-8GRKB 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

G Skill Intl F4-3200C16-8GRKB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 29

左右 -53% 更低的延时
更快的读取速度，GB/s

19.9 10.5

测试中的平均数值
更快的写入速度，GB/s

15.0 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C16-8GRKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 19
读取速度，GB/s

10.5 19.9
写入速度，GB/s

7.1 15.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X8GF2400C16S4 8GB

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CMT16GX4M2K3600C16 8GB

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Crucial Technology CT4G4DFS8266.M8FG 4GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Corsair CMW32GX4M4Z4000C18 8GB

Corsair CMW32GX4M4Z4000C18 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB