Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3333C16-8GTZ 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

G Skill Intl F4-3333C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

21.2 11.8

测试中的平均数值
更快的写入速度，GB/s

17.2 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3333C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

11.8 21.2
写入速度，GB/s

7.3 17.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 4043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston 9905625-139.A00G 16GB

Kingston 9905625-139.A00G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston 99U5702-025.A00G 8GB

Kingston 99U5702-025.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

G Skill Intl F4-3333C16-16GTZ 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston KHX2400C14S4/16G 16GB

Kingston KHX2400C14S4/16G 16GB