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Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4000C17-8GTRS 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs G Skill Intl F4-4000C17-8GTRS 8GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
G Skill Intl F4-4000C17-8GTRS 8GB

G Skill Intl F4-4000C17-8GTRS 8GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
G Skill Intl F4-4000C17-8GTRS 8GB 需要考虑的原因
G Skill Intl F4-4000C17-8GTRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 -7% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4000C17-8GTRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 27
  • 读取速度，GB/s
    10.5 left arrow 18.5
  • 写入速度，GB/s
    7.1 left arrow 16.7
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 3767

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

G Skill Intl F4-4000C17-8GTRS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4000C17-8GTRS 8GB
G Skill Intl F4-4000C17-8GTRS 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C16-8GTZRN 8GB
G Skill Intl F4-3200C16-8GTZRN 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMK32GX4M2C3000C16 16GB
Corsair CMK32GX4M2C3000C16 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CM4X4GF2666C16K4 4GB
Corsair CM4X4GF2666C16K4 4GB
内存RAM
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology 78.C1GMM.BAC0B 8GB
Apacer Technology 78.C1GMM.BAC0B 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston MSI24D4S7S8MH-8 8GB
Kingston MSI24D4S7S8MH-8 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM