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Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905624-014.A00G 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Kingston 9905624-014.A00G 4GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
Kingston 9905624-014.A00G 4GB 需要考虑的原因
Kingston 9905624-014.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 29
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905624-014.A00G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 23
  • 读取速度，GB/s
    10.5 left arrow 16.2
  • 写入速度，GB/s
    7.1 left arrow 13.3
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 2598

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Kingston 9905624-014.A00G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905624-014.A00G 4GB
Kingston 9905624-014.A00G 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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Kingston 9965669-018.A00G 16GB
内存RAM
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SK Hynix HMT351S6CFR8C-PB 4GB
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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
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内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
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SK Hynix HMT151R7TFR4C-H9 4GB
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G Skill Intl F4-3200C16-4GRB 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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SK Hynix GKE160SO102408-2400 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Kingston KHX2666C16/16G 16GB
内存RAM
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Samsung M378B5273CH0-CH9 4GB
V-GEN D4H8GL26A8TS6 8GB
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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
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Samsung DDR3 8GB 1600MHz 8GB
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Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
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内存RAM